|Project No.||Project Name||Responsible|
Simulation of Nanoscaled Interconnect Systems
|Prof. Dr. Thomas GESSNER
Dr. Reinhard STREITER
The objective of this subproject is to investigate the thermal and electrical behavior of interconnection systems for future technology nodes with regard to the application of copper, ad-vanced dielectric materials, and new barrier materials.
This project will be based on the investigations and shall be a direct continuation of the joint project between FUDAN University and Chemnitz University "Modeling and simulation of ULSI interconnection systems" [CHN 00/356].
Signal delay, cross-talk and heat transfer issues significantly impact chip performance and reliability of deep submicron interconnects. Elevated temperatures cause degradation of device performance and reduce interconnect reliability by accelerating all electromigration-induced failure mechanisms.
The low thermal conductivity of advanced dielectric materials causes different design limitations for dc and ac carrying interconnects. The maximum possible temperature and current density of dc lines is determined by a self-consistent approach considering both Joule heating and electromigration. Hence, interconnect temperatures and current densities have to be kept below certain limits to ensure a desired lifetime.
The effective resistivity of interconnects depends strongly on line thickness (size effect), temperature, and cladding layers. The influence of barriers on electrical and thermal properties of the interconnect system becomes more and more important. Therefore, material properties and dimensions of thin barriers and seed layers must be taken into consideration.
Well defined basic structures (parallel and crossing lines, vias, via arrays, screened lines) can be characterized and optimized independently of the actual circuit design. The objective of the simulations is the derivation of universal statements, predictions, and design rules for the optimization of the system architecture.
Cooperation with the German subprojects G1 (Gessner), G2 (Otto) as well as with the Chinese subprojects F3 (Qu Xinping) and F4 (Ruan Gang, Quan Wuyun) appear and will be performed in the mutual interest of both parties.
The properties of new materials are important simulation inputs and will be provided within subproject G1 and F3. Further simulation inputs are details of future interconnect topographies. These are results of process simulation performed in G2. The cooperation with subproject F4 will be focused on RF specifics of future interconnects.