First project period 04/2006 - 09/2010
Research Program
The research program of the International Research Training Group comprises 8 projects at the German institutions, as well as 7 at Fudan University and 3 at Shanghai Jiao Tong University.
The table provides an overview of the German projects:
| Project | Institution | Main Objective | Open Positions |
|---|---|---|---|
| G1: Metallization systems for nanoelectronics | TU Chemnitz - Center for Microtechnologies |
Cu CVD and ALD, self-aligned barriers, new porous low-k dielectrics and their integration | 2 PhD, 1 Postdoc |
| G2: Integrated modeling and simulation of deposition and planarization processes for interconnect systems | Fraunhofer IZM Chemnitz | IPVD, CMP, technology simulation | 2 PhD |
| G3: Simulation of nanoscaled interconnect systems | TU Chemnitz - Center for Microtechnologies |
Interconnect system simulation | 1 PhD |
| G4: Development of an elastic under-bump structure for wafer-level packaging | Berlin Technical University and
Fraunhofer IZM Berlin - High Density Interconnect and Wafer Level Packaging Group |
Copper, elastic under-bump structures | 1 PhD |
| G5: Precursor synthesis for advanced interconnect materials | TU Chemnitz - Inorganic Chemistry Group |
Metal CVD precursors | 2 PhD |
| G6: Mechanical characterization of thin films for interconnect systems | TU Chemnitz - Solid State Physics Group |
Mechanical characterization, thin films, porous materials | 2 PhD |
| G7: Optical characterization of thin films and porous materials | TU Chemnitz - Semiconductor Physics Group |
Mechanical characterization, thin films, porous materials | 2 PhD |
| G8: Structural and morphological characterization of nanoscaled interconnect systems | TU Chemnitz - Solid Surfaces Analysis Group |
TEM, SPM, and other nanoscale characterization methods, such as for barriers and ultra-low k dielectrics | 2 PhD |
At Fudan University and Shanghai Jiao Tong University , a similar research program is established comprising the following projects:
| Project | Institution | Main Objective | Responsible |
|---|---|---|---|
| F1: Characterization, modification and fine fabrication of materials based on SPM; Failure analysis of materials |
Fudan University | SPM characterization of thin films | Xuejian YAN, Jin LI |
| F2: Low-k dielectrics and copper interconnects / Integration of high performance metal-insulator- metal capacitors in Cu BEOL for RF and AMS circuit applications | Fudan University | New low-k material development and integration; integration of MIM capacitors in interconnects | Wei ZHANG, Shijin DING |
| F3: Diffusion barriers research | Fudan University | ALD, integration low-k, ruthenium barriers, interconnects for SiGe | Guoping RU, Xinping QU |
| F4: Modeling and simulation of electrical and thermal behavior for interconnects in nanoscaled CMOS ICs | Fudan University | Coupled thermal and electrical simulation in nanoscaled CMOS ICs | Gang RUAN, Wuyun QUAN |
| F5: Silicides for advanced contacts | Fudan University | Ni silicides, silicides on SiGe, new materials for advanced silicides | Guoping RU |
| F6: Application of electrochemical and SAMs methods in nanofabrication | Fudan University | Nanodeposition and characterization of high-conductivity materials, self-assembled monolayers (SAMs) and electroless deposition | Wenbin CAI |
| F7: Characterization of low-k / Cu interconnect materials | Fudan University | Optical and mechanical characterization of low-k dielectrics | Ran LIU, Jia ZHOU |
| SJ1: Optimization of thick photo resist lithography process for interconnects | Jiao Tong University | New technology approaches for packaging | Di CHEN |
| SJ2: Carbon nanotube interconnect | Jiao Tong University | Carbon nanotubes (CNT): experimental and simulation | Yafei ZHANG, Yongzhong WAN |
| SJ3: High-k dielectrics thin film deposition | Jiao Tong University | High-k materials, e.g. Al2O3; metallic thin films for seed layers | Chunshen YANG, Jun ZHU |
