The research program of the International Research Training Group comprises 9 projects at the German institutions, as well as 8 at Fudan University and 3 at Shanghai Jiao Tong University.
The table provides an overview of the German projects:
| Project | Institution | Main Objective | Open Positions |
|---|---|---|---|
| G1: Advanced processes, materials and their integration into nanoelectronics interconnect systems | TU Chemnitz - Center for Microtechnologies |
Barrier ALD and ALD seed layer integration, / metallization for 3D / Airgap structures / Interface between nanoscale diffusion barriers and porous dielectrics / Integration of Carbon nanotubes / Nanoimprint of ULK materials | 2 PhD |
| G2: Modeling of new material systems for NEMS focusing on thermo-electrical composites | Fraunhofer ENAS | Synthesis and characterization of thermoelectric nano composites / Development of multiscale models of thermoelectric composites / Parameter identification methods using measurement results and analytical models | 2 PhD |
| G3: Multiscale modeling and simulation of atomic layer deposition and calculation of electronic properties of nanoscale devices | TU Chemnitz - Center for Microtechnologies |
Modeling and simulation of advanced atomic layer deposition processes / Contact influence on the electrical transport in carbon nanotubes / Continuation and extension of nanowire simulation | 2 PhD |
| G4: Development of multilayer structures for wafer level packaging based on evaporated parylene | Berlin Technical University and
Fraunhofer IZM Berlin - High Density Interconnect and Wafer Level Packaging Group |
Investigations of parylene for wafer level packaging of sensitive wafers | 1 PhD |
| G5: Precursor synthesis for advanced interconnect materials | TU Chemnitz - Inorganic Chemistry Group |
Precursor Synthesis for CVD, ALD, Spin-Coating Deposition Techniques, particularly Copper, Silver, Gold, Ruthenium / Magnetic, Electrical and Catalytic Nanoparticles / one Dimensional Nanomaterials | 2 PhD |
| G6: Magnetic Nanostructures for Sensor Applications | TU Chemnitz - Surface and Interface Physics Group |
Magnetic coupling phenomena in film/nanostructure architectures / Scaling of exchange bias effect in magnetic nanostructures | 2 PhD |
| G7: Spectroscopic characterization of nanostructures and relevant interfaces | TU Chemnitz - Semiconductor Physics Group |
Spectroscopic characterization of 2d metallic nanostructures, metal/organic interfaces, 1d organic nanostructures | 2 PhD |
| G8: Characterization of molecular and nanoscaled interconnect systems | TU Chemnitz - Solid Surfaces Analysis Group |
Study of molecular self-assembling monolayers on crystalline metal substrates / cross-sectional analysis of interfaces by electron and scanning Probe microscopies | 2 PhD |
| G9: Rolled-up nanotech for on-chip energy storage | TU Chemnitz - Solid Surfaces Analysis Group |
Development of micrometer-sized electrochemical cells based on a single micro-/nanotube by using rolled-up nanotech | 2 PhD |
At Fudan University and Shanghai Jiao Tong University , a similar research program is established comprising the following projects:
| Project | Institution | Main Objective | Responsible |
|---|---|---|---|
| F1: Functionalized nanomembranes | Fudan University | Development of inorganic nanomembranes for energy storage and bio-sensing applications by using a top-downapproach | Yongfeng MEI, Ran LIU |
| F2: Nanoscale functional polymers for electronic applications | Fudan University | Electric fatigue in ferroelectric polymers, ferroelectric inorganicorganic composites and the related devices / Ferroelectric polymer-based memory structures on silicon substrates such as MFeOS and FeFET / Flexible polymer-based memory structures on flexible polymer substrates | Xuejian YAN, Guodong ZHU |
| F3: High density metal-insulator-metal capacitors embedded into Cu interconnects for RF and analog / mixed-signal ICs | Fudan University | ALD of various high-k materials for MIM capacitors | Shi-Jin DING |
| F4: Plasmonic-crystal based emitters and applications in nanosystems | Fudan University | Nanosystems applications of the plasmonic-crystal based emitters | Yi-Ping HUANG, Jia ZHOU |
| F5: Atomic layer deposition high-k gate dielectrics | Fudan University | Atomic layer deposition and characterization of high-k gate dielectrics on Si, SiGe, or GaAs3 | Wei ZHANG, Qing-Qing SUN |
| F6: Ultrathin diffusion barrier / adhesion layer for copper metallization | Fudan University | Study of diffusion barriers in the contact technology and the reaction between ultrathin barrier with porous ultra low-k materials | Xin-Ping QU |
| F7: Modeling and simulation of advanced devices and interconnect | Fudan University | Optimization and innovation of Schottky pinch rectifiers through simulation / Scaling of Schottky S/D MOSFET / Simulation of onchip optical interconnect performance | Guo-Ping RU, Gang RUAN |
| F8: Fabrication, characterization and application of metallic particulate catalysts on silicon | Fudan University | Methodology and recipes from wet chemical, CVD and PVD processes to the fabricate metallic layers (layers of Pt, Pd, and related alloys) on differently pretreated Si substrates, including porous and non porous, low or high doped Si | Wen-Bin CAI |
| SJ1: Micro fluidic biochip based on giant magnetoresistance (GMR) sensor | Jiao Tong University | In this project, multilayered GMR and spin-valve GMR films will be deposited by DC magnetron sputtering and the biosensors based on the GMR multilayers will be fabricated. | Di CHEN, Jie FENG |
| SJ2: Nanoscale interconnects based on one dimensional nanomaterials | Jiao Tong University | Development and characterization of one- dimensional materials with beneficial electrical and mechanical properties (Carbon nanotubes (CNTs)/Cu com-posite thin films, Brush-like CNT arrays) | Yafei ZHANG, Liying ZHANG, Zhi YANG |
| SJ3: Synthesis and characterization of Monodispersed Graphene | Jiao Tong University | Development of a novel strategy for preparation of stable aqueous dispersion of graphene sheets by introducing the intermolecular hydrogen bonds | Shuowu GUO |
The research program of the International Research Training Group comprises 8 projects at the German institutions, as well as 7 at Fudan University and 3 at Shanghai Jiao Tong University.
The table provides an overview of the German projects:
| Project | Institution | Main Objective | Open Positions |
|---|---|---|---|
| G1: Metallization systems for nanoelectronics | TU Chemnitz - Center for Microtechnologies |
Cu CVD and ALD, self-aligned barriers, new porous low-k dielectrics and their integration | 2 PhD, 1 Postdoc |
| G2: Integrated modeling and simulation of deposition and planarization processes for interconnect systems | Fraunhofer IZM Chemnitz | IPVD, CMP, technology simulation | 2 PhD |
| G3: Simulation of nanoscaled interconnect systems | TU Chemnitz - Center for Microtechnologies |
Interconnect system simulation | 1 PhD |
| G4: Development of an elastic under-bump structure for wafer-level packaging | Berlin Technical University and
Fraunhofer IZM Berlin - High Density Interconnect and Wafer Level Packaging Group |
Copper, elastic under-bump structures | 1 PhD |
| G5: Precursor synthesis for advanced interconnect materials | TU Chemnitz - Inorganic Chemistry Group |
Metal CVD precursors | 2 PhD |
| G6: Mechanical characterization of thin films for interconnect systems | TU Chemnitz - Solid State Physics Group |
Mechanical characterization, thin films, porous materials | 2 PhD |
| G7: Optical characterization of thin films and porous materials | TU Chemnitz - Semiconductor Physics Group |
Mechanical characterization, thin films, porous materials | 2 PhD |
| G8: Structural and morphological characterization of nanoscaled interconnect systems | TU Chemnitz - Solid Surfaces Analysis Group |
TEM, SPM, and other nanoscale characterization methods, such as for barriers and ultra-low k dielectrics | 2 PhD |
At Fudan University and Shanghai Jiao Tong University , a similar research program is established comprising the following projects:
| Project | Institution | Main Objective | Responsible |
|---|---|---|---|
| F1: Characterization, modification and fine fabrication of materials based on SPM; Failure analysis of materials |
Fudan University | SPM characterization of thin films | Xuejian YAN, Jin LI |
| F2: Low-k dielectrics and copper interconnects / Integration of high performance metal-insulator- metal capacitors in Cu BEOL for RF and AMS circuit applications | Fudan University | New low-k material development and integration; integration of MIM capacitors in interconnects | Wei ZHANG, Shijin DING |
| F3: Diffusion barriers research | Fudan University | ALD, integration low-k, ruthenium barriers, interconnects for SiGe | Guoping RU, Xinping QU |
| F4: Modeling and simulation of electrical and thermal behavior for interconnects in nanoscaled CMOS ICs | Fudan University | Coupled thermal and electrical simulation in nanoscaled CMOS ICs | Gang RUAN, Wuyun QUAN |
| F5: Silicides for advanced contacts | Fudan University | Ni silicides, silicides on SiGe, new materials for advanced silicides | Guoping RU |
| F6: Application of electrochemical and SAMs methods in nanofabrication | Fudan University | Nanodeposition and characterization of high-conductivity materials, self-assembled monolayers (SAMs) and electroless deposition | Wenbin CAI |
| F7: Characterization of low-k / Cu interconnect materials | Fudan University | Optical and mechanical characterization of low-k dielectrics | Ran LIU, Jia ZHOU |
| SJ1: Optimization of thick photo resist lithography process for interconnects | Jiao Tong University | New technology approaches for packaging | Di CHEN |
| SJ2: Carbon nanotube interconnect | Jiao Tong University | Carbon nanotubes (CNT): experimental and simulation | Yafei ZHANG, Yongzhong WAN |
| SJ3: High-k dielectrics thin film deposition | Jiao Tong University | High-k materials, e.g. Al2O3; metallic thin films for seed layers | Chunshen YANG, Jun ZHU |