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International Research Training Group
Research Programm

Second project period 10/2010 - 03/2015

Research Program

The research program of the International Research Training Group comprises 9 projects at the German institutions, as well as 8 at Fudan University and 3 at Shanghai Jiao Tong University.

The table provides an overview of the German projects:

Project Institution Main Objective Open Positions
G1: Advanced processes, materials and their integration into nanoelectronics interconnect systems TU Chemnitz -
Center for Microtechnologies
Barrier ALD and ALD seed layer integration, / metallization for 3D / Airgap structures / Interface between nanoscale diffusion barriers and porous dielectrics / Integration of Carbon nanotubes / Nanoimprint of ULK materials 2 PhD
G2: Modeling of new material systems for NEMS focusing on thermo-electrical composites Fraunhofer ENAS Synthesis and characterization of thermoelectric nano composites / Development of multiscale models of thermoelectric composites / Parameter identification methods using measurement results and analytical models 2 PhD
G3: Multiscale modeling and simulation of atomic layer deposition and calculation of electronic properties of nanoscale devices TU Chemnitz -
Center for Microtechnologies
Modeling and simulation of advanced atomic layer deposition processes / Contact influence on the electrical transport in carbon nanotubes / Continuation and extension of nanowire simulation 2 PhD
G4: Development of multilayer structures for wafer level packaging based on evaporated parylene Berlin Technical University and
Fraunhofer IZM Berlin - High Density Interconnect and Wafer Level Packaging Group
Investigations of parylene for wafer level packaging of sensitive wafers 1 PhD
G5: Precursor synthesis for advanced interconnect materials TU Chemnitz -
Inorganic Chemistry Group
Precursor Synthesis for CVD, ALD, Spin-Coating Deposition Techniques, particularly Copper, Silver, Gold, Ruthenium / Magnetic, Electrical and Catalytic Nanoparticles / one Dimensional Nanomaterials 2 PhD
G6: Magnetic Nanostructures for Sensor Applications TU Chemnitz -
Surface and Interface Physics Group
Magnetic coupling phenomena in film/nanostructure architectures / Scaling of exchange bias effect in magnetic nanostructures 2 PhD
G7: Spectroscopic characterization of nanostructures and relevant interfaces TU Chemnitz -
Semiconductor Physics Group
Spectroscopic characterization of 2d metallic nanostructures, metal/organic interfaces, 1d organic nanostructures 2 PhD
G8: Characterization of molecular and nanoscaled interconnect systems TU Chemnitz -
Solid Surfaces Analysis Group
Study of molecular self-assembling monolayers on crystalline metal substrates / cross-sectional analysis of interfaces by electron and scanning Probe microscopies 2 PhD
G9: Rolled-up nanotech for on-chip energy storage TU Chemnitz -
Solid Surfaces Analysis Group
Development of micrometer-sized electrochemical cells based on a single micro-/nanotube by using rolled-up nanotech 2 PhD

At Fudan University and Shanghai Jiao Tong University , a similar research program is established comprising the following projects:

Project Institution Main Objective Responsible
F1: Functionalized nanomembranes Fudan University Development of inorganic nanomembranes for energy storage and bio-sensing applications by using a top-downapproach Yongfeng MEI,
Ran LIU
F2: Nanoscale functional polymers for electronic applications Fudan University Electric fatigue in ferroelectric polymers, ferroelectric inorganicorganic composites and the related devices / Ferroelectric polymer-based memory structures on silicon substrates such as MFeOS and FeFET / Flexible polymer-based memory structures on flexible polymer substrates Xuejian YAN,
Guodong ZHU
F3: High density metal-insulator-metal capacitors embedded into Cu interconnects for RF and analog / mixed-signal ICs Fudan University ALD of various high-k materials for MIM capacitors Shi-Jin DING
F4: Plasmonic-crystal based emitters and applications in nanosystems Fudan University Nanosystems applications of the plasmonic-crystal based emitters Yi-Ping HUANG,
Jia ZHOU
F5: Atomic layer deposition high-k gate dielectrics Fudan University Atomic layer deposition and characterization of high-k gate dielectrics on Si, SiGe, or GaAs3 Wei ZHANG,
Qing-Qing SUN
F6: Ultrathin diffusion barrier / adhesion layer for copper metallization Fudan University Study of diffusion barriers in the contact technology and the reaction between ultrathin barrier with porous ultra low-k materials Xin-Ping QU
F7: Modeling and simulation of advanced devices and interconnect Fudan University Optimization and innovation of Schottky pinch rectifiers through simulation / Scaling of Schottky S/D MOSFET / Simulation of onchip optical interconnect performance Guo-Ping RU,
Gang RUAN
F8: Fabrication, characterization and application of metallic particulate catalysts on silicon Fudan University Methodology and recipes from wet chemical, CVD and PVD processes to the fabricate metallic layers (layers of Pt, Pd, and related alloys) on differently pretreated Si substrates, including porous and non porous, low or high doped Si Wen-Bin CAI
SJ1: Micro fluidic biochip based on giant magnetoresistance (GMR) sensor Jiao Tong University In this project, multilayered GMR and spin-valve GMR films will be deposited by DC magnetron sputtering and the biosensors based on the GMR multilayers will be fabricated. Di CHEN,
Jie FENG
SJ2: Nanoscale interconnects based on one dimensional nanomaterials Jiao Tong University Development and characterization of one- dimensional materials with beneficial electrical and mechanical properties (Carbon nanotubes (CNTs)/Cu com-posite thin films, Brush-like CNT arrays) Yafei ZHANG,
Liying ZHANG,
Zhi YANG
SJ3: Synthesis and characterization of Monodispersed Graphene Jiao Tong University Development of a novel strategy for preparation of stable aqueous dispersion of graphene sheets by introducing the intermolecular hydrogen bonds Shuowu GUO

First project period 04/2006 - 09/2010

Research Program

The research program of the International Research Training Group comprises 8 projects at the German institutions, as well as 7 at Fudan University and 3 at Shanghai Jiao Tong University.

The table provides an overview of the German projects:

Project Institution Main Objective Open Positions
G1: Metallization systems for nanoelectronics TU Chemnitz -
Center for Microtechnologies
Cu CVD and ALD, self-aligned barriers, new porous low-k dielectrics and their integration 2 PhD,
1 Postdoc
G2: Integrated modeling and simulation of deposition and planarization processes for interconnect systems Fraunhofer IZM Chemnitz IPVD, CMP, technology simulation 2 PhD
G3: Simulation of nanoscaled interconnect systems TU Chemnitz -
Center for Microtechnologies
Interconnect system simulation 1 PhD
G4: Development of an elastic under-bump structure for wafer-level packaging Berlin Technical University and
Fraunhofer IZM Berlin - High Density Interconnect and Wafer Level Packaging Group
Copper, elastic under-bump structures 1 PhD
G5: Precursor synthesis for advanced interconnect materials TU Chemnitz -
Inorganic Chemistry Group
Metal CVD precursors 2 PhD
G6: Mechanical characterization of thin films for interconnect systems TU Chemnitz -
Solid State Physics Group
Mechanical characterization, thin films, porous materials 2 PhD
G7: Optical characterization of thin films and porous materials TU Chemnitz -
Semiconductor Physics Group
Mechanical characterization, thin films, porous materials 2 PhD
G8: Structural and morphological characterization of nanoscaled interconnect systems TU Chemnitz -
Solid Surfaces Analysis Group
TEM, SPM, and other nanoscale characterization methods, such as for barriers and ultra-low k dielectrics 2 PhD

At Fudan University and Shanghai Jiao Tong University , a similar research program is established comprising the following projects:

Project Institution Main Objective Responsible
F1: Characterization, modification and fine fabrication of materials based on SPM;
Failure analysis of materials
Fudan University SPM characterization of thin films Xuejian YAN,
Jin LI
F2: Low-k dielectrics and copper interconnects / Integration of high performance metal-insulator- metal capacitors in Cu BEOL for RF and AMS circuit applications Fudan University New low-k material development and integration; integration of MIM capacitors in interconnects Wei ZHANG,
Shijin DING
F3: Diffusion barriers research Fudan University ALD, integration low-k, ruthenium barriers, interconnects for SiGe Guoping RU,
Xinping QU
F4: Modeling and simulation of electrical and thermal behavior for interconnects in nanoscaled CMOS ICs Fudan University Coupled thermal and electrical simulation in nanoscaled CMOS ICs Gang RUAN,
Wuyun QUAN
F5: Silicides for advanced contacts Fudan University Ni silicides, silicides on SiGe, new materials for advanced silicides Guoping RU
F6: Application of electrochemical and SAMs methods in nanofabrication Fudan University Nanodeposition and characterization of high-conductivity materials, self-assembled monolayers (SAMs) and electroless deposition Wenbin CAI
F7: Characterization of low-k / Cu interconnect materials Fudan University Optical and mechanical characterization of low-k dielectrics Ran LIU,
Jia ZHOU
SJ1: Optimization of thick photo resist lithography process for interconnects Jiao Tong University New technology approaches for packaging Di CHEN
SJ2: Carbon nanotube interconnect Jiao Tong University Carbon nanotubes (CNT): experimental and simulation Yafei ZHANG,
Yongzhong WAN
SJ3: High-k dielectrics thin film deposition Jiao Tong University High-k materials, e.g. Al2O3; metallic thin films for seed layers Chunshen YANG,
Jun ZHU

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