Research Overview

Simulation of processes and equipments for micro- and nanoelectronics

Deposition and etch

• Chemical (CVD, ALD/ALE, ECD)
• Physical (Sputtering, ion processing)

Approaches

• Fluid and particle dynamics
• Film growth simulation
• Considering surface and gas phase interactions
• From reactor to atomic scale

Simulation of nano materials and devices

Numerical device simulation

• Classical electronic and ionic transport
• Multiscale models and TCAD
• Device optimization

Atomistic scale device simulation

• Quantum transport and electronic structure
• Coupling to higher scales

Simulation of materials

• Material properties from arbitrary atomistic configurations
• Network models for composite materials

Equipments

Hardware

• High performance compute cluster MAINSIM
  • Large research infrastructure for MAIN research building
  • 36 Intel Xeon CPU-nodes (24 cores)
  • 4 GPU-nodes, each 2 Tesla P100
  • 48 Tflops, 11 TB RAM, 100 TB Storage + Backup
  • Infiniband network 56 Gb/s
  • Head node, Web Server, Desktop-Virtualization
• High performance compute cluster ENSSIM
  • 22 Compute nodes (Opteron/Xeon)
  • VM node, head node, storage nodes
• Computer Pool C50.239 with direct access to MAINSIM

Selected Software in use

• LAMMPS
• QuantumEspresso, Yambo
• Atomistix ToolKit (Quantum ATK)
• SIESTA, TranSIESTA
• SynopsisTCAD (Europractice)