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Center for Micro and Nano Technologies
1D/2D Nanodevices

Nanoelectronics and emerging concepts in photonics and quantum applications desire advanced materials and sustainable integration technologies. Our research focuses on scalable integration technologies for 1D and 2D nanomaterials such as Carbon Nanotubes and Graphene and their exploration in nanodevices.

Within our workgroup we develop and investigate environmental sensors, additive electronic modules as well as high performance transistors having the potential to surpass semiconductors like GaAs. Intensive research on the whole wafer scale fabrication chain has been conducted on the example of Carbon Nanotube FETs. This has culminated in monolithically integrated sensors on-top-of CMOS or strain-configurable 3D nanoarchitectures for applications such as ultra-sensitive electronic nose. Ongoing R&D deals with the validation of a 200 mm semiconductor wafer process, highly organized nanomaterial films and the implementation of graphene and other 2D nanomaterial systems for photonics and quantum applications.

Our team is methodically well prepared for nanodevice analytics, data science, development of advanced processing tools as well as prototyping making use of a wide spectrum of available microtechnological processes.

Research Topics

  • Nanomaterial based FETs for sensors and circuits
  • Process for highly ordered nanomaterial films
  • Strain configurable nanodevices and nanomembranes

Dr. Sascha Hermann

Research Field Leader
+49 371 531-35675

Selected Publications

F. Frank, S. Böttger, N.Mexis, N.A. Anagnostopoulos, A.Mohamed, M.Hartmann, H.Kuhn, C.Helke, T.Arul, S.Katzenbeisser, S.Hermann. CNT-PUFs: Highly Robust and Heat-Tolerant Carbon-Nanotube-Based Physical Unclonable Functions. Nanomaterials 2023, 13, 2930. https://doi.org/10.3390/nano13222930.

M. Hartmann, J. Tittmann-Otto, S. Böttger, G. Heldt, M. Claus, S. E. Schulz, M. Schröter, S. Hermann, Gate Spacer Investigation for Improving the Speed of High-Frequency Carbon Nanotube-Based Field-Effect Transistors, ACS Appl. Mater., 12, 27461 (2020), DOI: 10.1021/acsami.0c01171.

S. Böttger, C. Wagner, F. Lorkowski, M. Hartmann, J. Schuster, S. Hermann, Sensitivity control of carbon nanotube-based piezoresistive sensors by drain-induced barrier thinning, 25th Anniversary of Sensors and Actuators A 295, 288 (2019). DOI: 10.1016/j.sna.2019.06.003.