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Center for Microtechnologies
Analytics/ Characterization

Analytics/Characterization

  • Focused ion beam (FIB)
  • Preparation for micrograph sections
  • Sputtering: carbon, metals
  • Profilometry: tactile, optical (Datac, AFM, reflectometer, white light)
  • XPS: surface, depth profile
  • Wafer thickness
  • Sheet resistance
  • Wafer bow measurement
  • Adhesion tests: 4 point bending
  • Life time scanner
  • Thermogavimetric analysis and differential scanning calorimetry
  • (in situ) XPS spectroscopy
  • (in situ) Raman spectroscopy
  • Optical emission spectroscopy
  • Quadrupol mass spectrometry
  • Quantum cascade laser absorption spectroscopy
  • Langmuir probe
  • Spectroscopy: EDX, IR, FTIR, NIR, UV/Vis, fluorescence, Raman, spectral ellipsometry
  • Microscopy: light, SEM, SEM/FIB, AFM, TEM, SAM, laser scanning, thermographic, fluorescence
  • X-ray computer tomography
  • White light interferometry
  • Thermography
  • High speed imaging (up to 150.000 fps)
  • Shear test
  • Micro Chevron test (MCT)
  • Bending test
  • Tensile test
  • Hermeticity
    • MEMS structures and pressure gauge
    • Helium leakage test
    • FTIR spectroscopy
  • Material composition: EDX, laser scanning, LSAW, IR
  • Material characterization: Young’s modulus, Poisson’s ratio, thermal expansion coefficient (CTE)
  • Elastic-plastic and creep characterization of bulk materials and thin films (-70 °C … 500 °C)
  • Visco-elastic characterization – DMA, TMA, TGA: Master curve, shift functions (time, temperature, humidity)
  • Determination of fracture mechanics parameters for critical and sub-critical crack growth (-40 °C … 200 °C)
  • 3D in situ warpage, deformation and strain measurements of 1 x 1 mm² … 300 x 300 mm² objects by chromatic sensor, white light interferometry, confocal microscopy or gray scale image correlation (microDAC) in air, N2 or Ar between -80 °C and 400 °C with sub-micron resolution
  • Micro and nano hardness and strength testing on films, MEMS structures and membranes
  • fibDAC determination of the mechanical stresses in BEOL film stacks and MEMS structures with highest spatial resolution (down to 250 nm in-plane and 50 nm in depth)
  • Electromagnetic material assessment
  • Antenna measurement and characterization
  • RF network and spectrum analysis
  • EM near field characterization
  • Wafer probe
    • Current-voltage
    • Capacity-voltage
    • Biased temperature stress
    • TVS measurements
    • Mercury probe
  • Hot Wire Anemometry (up to 300 m/s)
  • 2D / 3D scan and visualization of pressure and velocity profiles (3D travers system, 200 mm x 200 mm x 400 mm)
  • Automated measurement software for multi parameter data acquisition
    • Individual measurement workflows (parameter sweep, performance map, ...)
    • Parallel monitoring of environmental and system parameters (flow velocity, pressure, ...)
    • Signal analysis of digital sensors
    • Signal analysis of analog sensors (+/-10 V, up to 250 kHz
  • Combined characterization of transducer movement, cavity pressure and flow velocity in gas-fluidic actuators
  • Amplifier and control system for piezoelectric actuators (up to 350 V, 220 mA)

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