Processes
| RCA clean |
| Piranha clean |
| DI-water flushing |
| Thermal oxidation | dry, wet, HCl |
| Annealing | inert, reducing, oxidizing, ambient and forming gas |
Physical vapor deposition
| Sputtering |
|
| Metalization: | Ag, Al, Au, Co, Cr, Cu, Mo, Ni, Pd, Pt, Ru, Sc, Ta, Ti, W |
| Metal Alloys: | AlSiCu, AlSi |
| Memristive: | BiFeO3, TiO2, TixO(2x-1) |
| Oxides, Nitrides: | Al2O3, CuOx, SiO2, TaN, Ta2O5, TiN, TiO2 |
| Piezoelectric: | AlN, AlScN |
| Photonics, Optics: | AlN, ITO |
| Semiconductors: | Ge, Si |
| Spintronics: | MgO, MnIr20, Co40Fe40B20, Ni81Fe19, Co90Fe10, Co20Fe60B20 |
| Superconductors: | CeO2, SrTiO3, YBa2Cu3O7 |
| Packaging: | Al-Pd-Multilayer |
| Ion beam sputter deposition | Al, Co, Cr, Cu, Mo, Ni, Ru, Ta |
| Electron beam evaporation | Al, Co, Cu, Ni, Pd, Pt |
Chemical vapor deposition
| Plasma enhanced CVD | PETEOS-SiO2, Si3N4, SixOyNz, diamond-like carbon, CNTs, CF-Polymers, amorphous silicon |
| Low-pressure CVD | Si3N4, polysilicon |
| Metal-organic CVD | Cu, TiN, Co |
| CVD | Parylene N, C, D, F, AF4 |
Atomic layer deposition
| Metals | Co |
| Metal oxides | Al2O3, HfO2, TiO2 |
Electrochemical processes
| Electrochemical deposition (ECD) | Au, Cu, Ni, Pd, Sn, Al (ionic liquids), In, Ga, AgSn, AuSn (ionic liquids) |
| Electroless deposition (ELD) | Au, Ni |
Others
| Dielectrophoresis (DEP) | selective placement of nanomaterials (e. g. CNTs, nanowires) |
| Spin-on | dielectrics, porous ULK |
| Electron beam lithography | resolution: < 50 nm |
| Projection lithography | 400 nm |
| Contact lithography | 2 µm |
| Nano imprint lithography | 2 µm |
| Double side lithography | |
| Spray coating | |
| Spin coating | |
| Plasma strip | oxidizing, reducing |
Wet processes
| Metals | Al, Au, Cr, Cu, Pt, Ti, W, Pd/Al |
| Non-metals | AlN, CuxO, Si3N4, SiO2, Si, polysilicon, glass |
Dry processes
| Metals | Al, Cr, Cu, Ti, Ta, TiW, W |
| Non-metals | Si, polysilicon, SiC, SiO2, Si3N4, silicides, TiN, resists, glass, low-k dielectrics |
| Deep reactive ion etching | Si |
Lift-off
Gas phase etching of SiO2
| Thermal evaporation | Al, Ag, Ca, MoOx, HMTPD, CBP, TPD, mCP, ZnPc, C60, LiF, spiroMeOTAD |
| CMP for patterning | Al, Cu, Ge, Si, SiO2, W, barriers (TiN/Ti, TaN/Ta), ceramics (LiNbO3, LiTaO3), glass, isolators, stainless steel |
| Planarization and surface finishing | |
| Grinding | Si, glass, ceramics |
| Spin etch | Si, glass |
| Through silicon vias | |
| Integration concepts | via last, via middle, vias for glass and silicon substrates |
| Processes | deep etching, isolation, metallization, lithography in holes |
| Metallization | metal-CVD, RDL, UBM, bumping (PVD, ECD, screen printing, aerosol jet printing) |
| Wafer thinning and handling | Si, glass, ceramics |
| Temporary wafer bonding and debonding for thin wafer handling | |
| Hybrid and vertical integration of MEMS/NEMS | |
| Aerosol jet printing |
Thin film encapsulation
| Biocompatible packaging (parylene (C, D, F)) incl. pre-treatment (silanization) |
| High aspect ratio microstructures |
Wafer bonding (with or without interlayer)
Conventional, permanent wafer bonding
| Silicon fusion bonding | RT ... 100 °C, 100 °C ... 200 °C, 200 °C ... 400 °C, > 400 °C, Si, borosilicate glass, foturan glass, quartz glass, LiTaO3, LTCC, stainless steel | ||||
| Anodic bonding | RT ... 550 °C, 0.... 500 kPa, 0 ... 2000 V, Si, SiO2, Si3N4, borofloat, pyrex, SD2 | ||||
| Glass frit bonding | Si, glass | ||||
| Eutectic bonding | Au-Si, Au-Sn, Al-Ge | ||||
| Thermo compression bonding | Al-Al, Cu-Cu, Au-Au (nanoporous gold), plasma enhanced Cu-Cu bonding | ||||
| SLID bonding | Au-In, Au-Sn, Cu-In, Cu-Sn |
Low-temperature, permanent wafer bonding
| Reactive bonding | Si, Al2O3, Al, Cu, borosilicate glass, foturan glass, quartz glass, LiTaO3, covar, stainless steel | ||||
| Plasma-activated bonding | |||||
| Laser-assisted bonding | glass-frit, glass-silicon | ||||
| Sintering | Ag, Cu |
Temporary wafer bonding
| Bonding and debonding | thin wafer processing |
Packaging of integrated circuits
| Wire bonding |
| Al-Si | 18, 32 µm | ||||
| Al | 125, 250, 300 µm | ||||
| Au | 25, 30, 50, 125 µm | ||||
| Cu | 32 µm |
| Chip bonding | flip-chip, chip-to-chip (C2C), chip-to-wafer (C2W), multi-chip-module (MCM), chip-to-board (C2B), surface-mounting technology (SMT), printed contacts | ||
| Encasings and Caps | metal, glass, ceramics, plastics, thin film encapsulation (Parylene) | ||
| Dicing |
| Picosecond laser (10 W) | 266 nm, 355 nm, 532 nm, 1064 nm, pulsed energy |
| Thulium fiber laser (20 W) | 1908 nm, continuous wave |
| Materials: | |
| Polymers | PC, PMMA, PET, COC, acrylic resin, adhesive tapes (incl. cover sheets) |
| Ceramics | LiTaO3, Al2O3, LiNbO3, PZT |
| Metals | Al, Mo, Au, Pd, stainless steel |
| Glass | borofloat, quartz, BK7, microscope slides |
| Semiconductors | Si (mono and polycrystalline), ITO |
| Others | solder, reactive foils, films with nanoparticles |
| Inkjet | sheet-fed, web-fed |
| Aerosol jet | sheet-fed |
| Gravure | web-fed |
| Screen | sheet-fed, web-fed |
| Functionality formation by sintering | thermal, IR, UV, laser, IPL, electrical, chemical, plasma |
| Materials | |
| Inks | conductive inks: Ag, Cu, Au, C, Zn, ..., semiconductive inks (organic and oxide-based), dielectric inks (organic) |
| Substrates | polymer films (PET, PEN, PI, PC, PVC, PP, ...), paper (uncoated and coated), congurated cardboard, glass, ceramics, textiles, sheet metal, rubber |
For your support, we operate the »Chemnitz Inkjet Technikum« offering the following research and development services:
- Customer-tailored R&D projects
- Ink printability verification
- Initial printing tests (inkjet, gravure, screen)
- Surface energy optimization of substrates
- Ink and layer characterization
- Consulting, workshops, lectures and hands on training
| CVD-Synthesis | MWCNT, SWCNT, VACNTs, low-T Processes |
| ICNT-Process | room temperature integration of VACNTs |
| Wet-processing | DEP, Self-Assembly, Transfer, printing |
