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Center for Microtechnologies


RCA clean
Piranha clean
DI-water flushing
Thermal oxidation dry, wet, HCl
Annealing inert, reducing, oxidizing, ambient and forming gas

Physical vapor deposition



Metalization: Ag, Al, Au, Co, Cr, Cu, Mo, Ni, Pd, Pt, Ru, Sc, Ta, Ti, W
Metal Alloys: AlSiCu, AlSi
Memristive: BiFeO3, TiO2, TixO(2x-1)
Oxides, Nitrides: Al2O3, CuOx, SiO2, TaN, Ta2O5, TiN, TiO2
Piezoelectric: AlN, AlScN
Photonics, Optics: AlN, ITO
Semiconductors: Ge, Si
Spintronics: MgO, MnIr20, Co40Fe40B20, Ni81Fe19, Co90Fe10, Co20Fe60B20
Superconductors: CeO2, SrTiO3, YBa2Cu3O7
Packaging: Al-Pd-Multilayer
Ion beam sputter deposition Al, Co, Cr, Cu, Mo, Ni, Ru, Ta
Electron beam evaporation Al, Co, Cu, Ni, Pd, Pt

Chemical vapor deposition

Plasma enhanced CVD PETEOS-SiO2, Si3N4, SixOyNz, diamond-like carbon, CNTs, CF-Polymers, amorphous silicon
Low-pressure CVD Si3N4, polysilicon
Metal-organic CVD Cu, TiN, Co
CVD Parylene N, C, D, F, AF4

Atomic layer deposition

Metals Co
Metal oxides Al2O3, HfO2, TiO2

Electrochemical processes

Electrochemical deposition (ECD) Au, Cu, Ni, Pd, Sn, Al (ionic liquids), In, Ga, AgSn, AuSn (ionic liquids)
Electroless deposition (ELD) Au, Ni


Dielectrophoresis (DEP) selective placement of nanomaterials (e. g. CNTs, nanowires)
Spin-on dielectrics, porous ULK
Electron beam lithography resolution: < 50 nm
Projection lithography 400 nm
Contact lithography 2 µm
Nano imprint lithography 2 µm
Double side lithography
Spray coating
Spin coating
Plasma strip oxidizing, reducing

Wet processes

Metals Al, Au, Cr, Cu, Pt, Ti, W, Pd/Al
Non-metals AlN, CuxO, Si3N4, SiO2, Si, polysilicon, glass


Dry processes

Metals Al, Cr, Cu, Ti, Ta, TiW, W
Non-metals Si, polysilicon, SiC, SiO2, Si3N4, silicides, TiN, resists, glass, low-k dielectrics
Deep reactive ion etching Si




Gas phase etching of SiO2

Thermal evaporation Al, Ag, Ca, MoOx, HMTPD, CBP, TPD, mCP, ZnPc, C60, LiF, spiroMeOTAD
CMP for patterning Al, Cu, Ge, Si, SiO2, W, barriers (TiN/Ti, TaN/Ta), ceramics (LiNbO3, LiTaO3), glass, isolators, stainless steel
Planarization and surface finishing
Grinding Si, glass, ceramics
Spin etch Si, glass
Through silicon vias
Integration concepts via last, via middle, vias for glass and silicon substrates
Processes deep etching, isolation, metallization, lithography in holes
Metallization metal-CVD, RDL, UBM, bumping (PVD, ECD, screen printing, aerosol jet printing)
Wafer thinning and handling Si, glass, ceramics
Temporary wafer bonding and debonding for thin wafer handling
Hybrid and vertical integration of MEMS/NEMS
Aerosol jet printing

Thin film encapsulation

Biocompatible packaging (parylene (C, D, F)) incl. pre-treatment (silanization)
High aspect ratio microstructures

Wafer bonding (with or without interlayer)


Conventional, permanent wafer bonding

    Silicon fusion bonding   RT ... 100 °C, 100 °C ... 200 °C, 200 °C ... 400 °C, > 400 °C, Si, borosilicate glass, foturan glass, quartz glass, LiTaO3, LTCC, stainless steel  
    Anodic bonding   RT ... 550 °C, 0.... 500 kPa, 0 ... 2000 V, Si, SiO2, Si3N4, borofloat, pyrex, SD2  
    Glass frit bonding   Si, glass  
    Eutectic bonding   Au-Si, Au-Sn, Al-Ge  
    Thermo compression bonding   Al-Al, Cu-Cu, Au-Au (nanoporous gold), plasma enhanced Cu-Cu bonding  
    SLID bonding   Au-In, Au-Sn, Cu-In, Cu-Sn  


Low-temperature, permanent wafer bonding

    Reactive bonding   Si, Al2O3, Al, Cu, borosilicate glass, foturan glass, quartz glass, LiTaO3, covar, stainless steel  
    Plasma-activated bonding  
    Laser-assisted bonding   glass-frit, glass-silicon  
    Sintering   Ag, Cu  


Temporary wafer bonding

    Bonding and debonding   thin wafer processing  

Packaging of integrated circuits

Wire bonding  
    Al-Si   18, 32 µm  
    Al   125, 250, 300 µm  
    Au   25, 30, 50, 125 µm  
    Cu   32 µm  
Chip bonding   flip-chip, chip-to-chip (C2C), chip-to-wafer (C2W), multi-chip-module (MCM), chip-to-board (C2B), surface-mounting technology (SMT), printed contacts  
Encasings and Caps   metal, glass, ceramics, plastics, thin film encapsulation (Parylene)  
Picosecond laser (10 W) 266 nm, 355 nm, 532 nm, 1064 nm, pulsed energy
Thulium fiber laser (20 W) 1908 nm, continuous wave
Polymers PC, PMMA, PET, COC, acrylic resin, adhesive tapes (incl. cover sheets)
Ceramics LiTaO3, Al2O3, LiNbO3, PZT
Metals Al, Mo, Au, Pd, stainless steel
Glass borofloat, quartz, BK7, microscope slides
Semiconductors Si (mono and polycrystalline), ITO
Others solder, reactive foils, films with nanoparticles
Inkjet sheet-fed, web-fed
Aerosol jet sheet-fed
Gravure web-fed
Screen sheet-fed, web-fed
Functionality formation by sintering thermal, IR, UV, laser, IPL, electrical, chemical, plasma
Inks conductive inks: Ag, Cu, Au, C, Zn, ..., semiconductive inks (organic and oxide-based), dielectric inks (organic)
Substrates polymer films (PET, PEN, PI, PC, PVC, PP, ...), paper (uncoated and coated), congurated cardboard, glass, ceramics, textiles, sheet metal, rubber


For your support, we operate the »Chemnitz Inkjet Technikum« offering the following research and development services:

  • Customer-tailored R&D projects
  • Ink printability verification
  • Initial printing tests (inkjet, gravure, screen)
  • Surface energy optimization of substrates
  • Ink and layer characterization
  • Consulting, workshops, lectures and hands on training
CVD-Synthesis MWCNT, SWCNT, VACNTs, low-T Processes
ICNT-Process room temperature integration of VACNTs
Wet-processing DEP, Self-Assembly, Transfer, printing

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